GSMBT5089 datasheet(1/2 Pages) GTM

номер детали	GSMBT5089

подробное описание детали	NPN EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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производитель	GTM [GTM CORPORATION]

домашняя страница	http://www.gtm.com.tw

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ISSUED DATE :2005/08/31

REVISED DATE :

G

G S

S M

M B

B T

T 55008899

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

25

V

Emitter to Base Voltage

VEBO

4.5

V

Collector Current

IC

50

mA

Total Power Dissipation

PD

225

mW

Electrical Characteristics (Ta = 25 )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

30

-

V

IC=100uA , IE=0

BVCEO

25

-

V

IC=1mA, IB=0

BVEBO

4.5

-

V

IE=10uA ,IC=0

ICBO

-

50

nA

VCB=15V, IE=0

IEBO

-

100

nA

VEB=4.5V, IC=0

*VCE(sat)

-

500

mV

IC=10mA, IB=1mA

*VBE(sat)

-

800

mV

IC=10mA, IB=1mA

*hFE1

400

-

1200

VCE=5V, IC=0.1mA

*hFE2

450

-

VCE=5V, IC=1mA

*hFE3

400

-

VCE=5V, IC=10mA

fT

50

-

MHz

VCE=5V, IC=0.5mA, f=20MHz

Cob

-

4.0

pF

VCB=5V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

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