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HAF2011S датащи(PDF) 4 Page - Renesas Technology Corp

номер детали HAF2011S
подробное описание детали  Silicon N Channel MOS FET Series Power Switching
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2011S датащи(HTML) 4 Page - Renesas Technology Corp

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HAF2011(L), HAF2011(S)
REJ03G1138-0500 Rev.5.00 Aug 21, 2007
Page 4 of 8
Main Characteristics
80
60
40
20
0
0
50
100
150
200
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5
1
2
5
10
20
50 100
100
80
60
40
20
0
2
04
6
8
10
10 V
VGS = 3.5 V
0
0
12
3
4
5
75
°C
Ta = 25
°C
100
µs
1 ms
PW
=
10
ms
Operation in
this area is
limited by RDS (on)
50
40
30
20
10
8 V
6 V
5 V
4 V
VDS = 10 V
Pulse Test
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
0.5
0.4
0.3
0.2
0.1
0
2
04
6
8
10
50
1
2
5
10
20
50
100
20
10
2
5
1
10 A
ID = 20 A
5 A
200
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
DC
Operation
(Tc
=
25
°C)
Tc = –25
°C
25
°C
Pulse Test
VGS = 4 V
10 V
Thermal shut down
Operation area



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