HAT1065T datasheet(2/4 Pages) RENESAS

номер детали	HAT1065T

подробное описание детали	Silicon P Channel MOS FET High Speed Power Switching

PDF	4 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

Logo

2 / 4 page

HAT1065T

REJ03G0161-0200 Rev.2.00 Aug 06, 2007

Page 2 of 3

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

–200

—

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±15

—

IG =

±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±12 V, VDS = 0

Zero gate voltage drain current

IDSS

—

–5

µA

VDS = –200 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–1.0

—

–2.0

VDS = –10 V, ID = –1 mA

RDS(on)

—

5.0

6.2

Ω

ID = –0.25 A, VGS = –10 V

Note4

RDS(on)

—

6.0

7.5

Ω

ID = –0.25 A, VGS = –4 V

Note4

Static drain to source on state

resistance

RDS(on)

—

7.0

10.0

Ω

ID = –1 A, VGS = –5 V

Note4

Forward transfer admittance

|yfs|

0.29

0.45

—

ID = –0.25 A, VDS = –10 V

Note4

Input capacitance

Ciss

—

140

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

VGS = –5 V, ID = –0.25 A

VDD

≅ –30 V

Body–drain diode forward voltage

VDF

—

–0.9

–1.4

IF = –0.25 A, VGS = 0

Note4

Notes: 4. Pulse test

HAT1065T датащи(PDF) 2 Page - Renesas Technology Corp

HAT1065T датащи(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4

датащи скачать

ссылки URL