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ISSUED DATE :2005/06/08

REVISED DATE :

G

P

R

Description

The GSBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

-80

V

Collector to Emitter Voltage

VCEO

-65

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current

IC

100

mA

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-80

-

-

V

IC=-100uA

BVCEO

-65

-

-

V

IC=-1mA

BVEBO

-5

-

-

V

IE=-10uA

ICBO

-

-

-15

nA

VCB=-30V

VCE(sat)1

-

-75

-300

mV

IC=-10mA, IB=-0.5mA

VCE(sat)2

-

-250

-650

mV

IC=-100mA, IB=-5mA

VBE(sat)1

-

-700

-

mV

IC=-10mA, IB=-0.5mA

VBE(sat)2

-

-850

-

mV

IC=-100mA, IB=-5mA

VBE(on)1

-600

-

-750

mV

VCE=-5V, IC=-2mA

VBE(on)2

-

-

-820

mV

VCE=-5V, IC=-10mA

75

-

800

VCE=-5V, IC=-2mA

fT

-

150

-

MHz

VCE=-5V, IC=-10mA, f=100MHz

Cob

-

4.5

-

pF

VCB=-10V, f=1MHz, IE=0A

Rank

9AA

9AB

9AC

Normal

Range

125 - 250

220 - 475

420 – 800

75 - 475