GS3018

Page: 2/4

ISSUED DATE :2004/11/24

REVISED DATE :2005/12/02C

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

0.8

-

2.0

V

Forward Transconductance

20

-

-

mS

Gate-Source Leakage Current

-

-

±1

uA

Drain-Source Leakage Current

-

-

1

uA

-

5

8

Static Drain-Source On-Resistance

-

7

13

Input Capacitance

-

-

50

Output Capacitance

-

-

25

Reverse Transfer Capacitance

-

-

5

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

0.84

1.5

V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.