M58LT128HST datasheet(22/110 Pages) STMICROELECTRONICS

номер детали	M58LT128HST

подробное описание детали	128-Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories

PDF	110 Pages

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22 / 110 page

Command interface

M58LT128HST, M58LT128HSB

22/110

4.8

Program command

The program command is used to program a single word to the memory array.

If the block being programmed is protected, then the Program operation will abort, the data

in the block will not be changed and the Status Register will output the error.

Two Bus Write cycles are required to issue the Program Command.

●

The first bus cycle sets up the Program command.

●

The second latches the address and data to be programmed and starts the

Program/Erase Controller.

Once the programming has started, read operations in the bank being programmed output

the Status Register content.

During a Program operation, the bank containing the word being programmed will only

accept the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query

and the Program/Erase Suspend command, all other commands will be ignored. A Read

Array command is required to return the bank to Read Array mode.

Refer to Dual Operations section for detailed information about simultaneous operations

allowed in banks not being programmed.

Typical Program times are given in Table 16: Program/Erase times and endurance cycles.

The Program operation aborts if Reset, RP, goes to VIL. As data integrity cannot be

guaranteed when the Program operation is aborted, the word must be reprogrammed.

See Appendix C, Figure 19: Program flowchart and pseudo code, for the flowchart for using

the Program command.

M58LT128HST датащи(PDF) 22 Page - STMicroelectronics