GP24BC01/02/02/04/08/16

Page: 7/9

ISSUED DATE :2006/08/17

REVISED DATE :

Figure 9. Byte Write

Figure 10. Page Write

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Write Operations

Byte/Page Write:

If a write operation is entered (R/W=0) and an acknowledgment is sent, then the next sequence requires an

be loaded. The device will send an acknowledgment after each byte to confirm the transmission.

To being the write cycle, a STOP condition must be issued (refer to Figure 9). Both byte and page write

When the STOP condition occurs, an internal time is started, all input are disabled, and the EEPROM will not

respond to any more commands until the write cycle is completed.

Note: The number of bytes in a page depends on the density used. If 1K density is used, then the page size is

8 bytes. In contrast, if the 16K density is used, then the page size is 16 bites. Refer to the Memory

Organization section for more details.

The internal page counter is incremented after each byte received, but the row location of the memory page

byte in the page is received. Any further data loaded into the page buffer will overwrite the previous data

loaded.

Acknowledge Polling: After the STOP condition is issued, the write cycle begins. Acknowledge polling can be

initiated by sending a START condition followed by the device address word. If the EEPROM has completed

the internal write cycle and returned to standby mode, the device will respond by sending back an

acknowledgment by pulling the SDA pin low. Otherwise, the sequence will be ignored and no acknowledgment

will be sent.

Read Operations

There are three types of read operations: current address read, random address read, and sequence read. A

random address read can be considered a current address read operation with an additional sequence in the

beginning to load a different address into the internal counter. A sequential read occurs when subsequent

bytes are clocked out after a current address read or random address read occurs.

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