CORPORATION

1/2

ISSUED DATE :2003/07/15

REVISED DATE :2006/05/09B

GM BTA13

N

R

Description

The GMBTA13 is designed for Darlington Amplifier Transistor.

Features

*High D.C. Current Gain

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0°

10°

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature

Tstg

-55 ~ +150

:

Collector to Base Voltage

30

V

Collector to Emitter Voltage

30

V

Emitter to Base Voltage

10

V

Thermal Resistance Junction to Ambient

556

/W

:

Thermal Resistance Junction to Case

170

/W

:

Collector Current

500

mA

Total Power Dissipation

225

mW

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

30

-

-

V

30

-

-

V

10

-

-

V

-

-

100

nA

-

-

100

nA

-

-

1.5

V

-

-

2.0

V

*hFE1

5k

-

-

*hFE2

10k

-

-

fT

125

-

-

MHz

Cob

-

-

6

pF

Pulse Test: Pulse Width 380us, Duty Cycle 2%