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G

N

R

Description

The GMBT1815 is Designed for use Driver Stage of AF Amplifier and General Purpose Application.

Package Dimensions

Millimeter

Millimeter

REF

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0 C

10 C

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Total Power Dissipation

PD

250

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=100uA

BVCEO

50

-

-

V

IC=1mA

BVEBO

5

-

-

V

IE=10uA

ICBO

-

-

100

nA

VCB=60V

IEBO

-

-

100

nA

VEB=5V

VCE(sat)

-

-

250

mV

IC=100mA, IB=10mA

VBE(sat)

-

-

1.0

V

IC=100mA, IB=10mA

hFE1

120

-

700

VCE=6V, IC=2mA

hFE2

25

-

-

VCE=6V, IC=150mA

hFE3

80

-

-

VCE=1V, IC=10mA

fT

80

-

-

MHz

VCE=10V, IC=1mA, f=100MHz

Cob

-

-

3.5

pF

VCB=10V, f=1MHz

Classification of hFE1

Rank

C4Y

C4G

C4B

Range

120 - 240

200 - 400

350 - 700