IRLP3803

PD - _____

Logic-Level Gate Drive

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

8/4/95

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

1.0

Case-to-Sink, Flat, Greased Surface

––––

0.24

––––

°C/W

Junction-to-Ambient

––––

––––

40

Thermal Resistance

PRELIMINARY

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

Description

Parameter

Max.

Units

120

83

A

Pulsed Drain Current

470

Power Dissipation

150

W

Linear Derating Factor

1.0

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

610

mJ

Avalanche Current

71

A

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

1.8

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

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