BUT11A datasheet(1/2 Pages) ISC

номер детали	BUT11A

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUT11A

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 450V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):1.5V(Max) @IC=2.5A

APPLICATIONS

· Switching Regulators

·

Power Amplifier Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1000

V

VCEO

Collector-Emitter Voltage

450

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current (Pulse)

10

A

IB

Base Current-Continuous

2

A

PC

Total Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

3

2

1

TO-220C Package

Pin 1 Base

2 Collector

3 Emitter

Аналогичный номер детали - BUT11A

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BUT11A	96Kb / 12P	Silicon diffused power transistors 1997 Aug 13
STMicroelectronics	BUT11A	66Kb / 4P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jun-1997
Fairchild Semiconductor	BUT11A	42Kb / 4P	High Voltage Power Switching Applications
STMicroelectronics	BUT11A	77Kb / 5P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Mar-2004
Savantic, Inc.	BUT11A	100Kb / 3P	Silicon NPN Power Transistors

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