GLBCX53 datasheet(1/2 Pages) GTM

номер детали	GLBCX53

подробное описание детали	PNP SILICON EPITAXIAL TRANSISTOR

PDF	2 Pages

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производитель	GTM [GTM CORPORATION]

домашняя страница	http://www.gtm.com.tw

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GLBCX53

1/2

ISSUED DATE :2005/08/18

REVISED DATE :2005/11/21B

G

G L

L B

B C

C X

X 5533

P

P N

N P

P S

S II LL II C

C O

O N

N E

E P

P II T

T A

A X

X II A

A LL T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose

amplification.

Features

&Collector-Emitter Voltage: VCEO=-80V

&Complementary to GLBCP56

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13°TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0°

10°

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature Range

TsTG

-65 ~ +150

:

Collector to Base Voltage

VCBO

-100

V

Collector to Emitter Voltage

VCEO

-80

V

Emitter to Base Voltage

VEBO

-5

V

Collect Current(DC)

IC

1

A

Total Power Dissipation

PD

1.5

W

Electrical Characteristics (Ta = 25 : )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-100

-

V

IC=-100uA, IE=0

BVCEO

-80

-

V

IC=-1mA, IB=0

BVEBO

-5

-

V

IE=-10uA, IC=0

ICBO

-

-100

nA

VCB=-30V, IE=0

IEBO

-

-100

nA

VEB=-5V, IC=0

*VCE(sat)1

-

-500

mV

IC=-500mA, IB=-50mA

*VBE(on)

-

-1000

mV

IC=-500mA, VCE=-2V,

*hFE1

63

-

VCE=-2V, IC=-5mA

*hFE2

63

-

250

VCE=-2V, IC=-150mA

*hFE3

40

-

VCE=-2V, IC=-500mA

fT

100

-

MHz

VCE=-5V, IC=-10mA, f=100MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE2

Rank

A

B

Range

63 - 160

100 - 250

SOT-223

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