GLBCP69 datasheet(1/2 Pages) GTM

номер детали	GLBCP69

подробное описание детали	PNP SILICON EPITAXIAL TRANSISTOR

PDF	2 Pages

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производитель	GTM [GTM CORPORATION]

домашняя страница	http://www.gtm.com.tw

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ISSUED DATE :2005/07/15

REVISED DATE :

G

G L

L B

B C

C P

P 6699

P

P N

N P

P S

S II L

L II C

C O

O N

N E

E P

P II T

T A

A X

X II A

A L

L T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GLBCP69 is designed for use in low voltage and medium power applications.

Features

&VCEO : -20V

&IC :1A

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-65~+150

Collector to Base Voltage

VCBO

-25

V

Collector to Emitter Voltage

VCEO

-20

V

Emitter to Base Voltage

VEBO

-5

V

Collector Current

IC

-1

A

Total Power Dissipation

PD

1.5

W

Electrical Characteristics(Ta = 25 : ,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-25

-

V

IC=-100uA , IE=0

BVCEO

-20

-

V

IC=-1mA, IB=0

BVEBO

-5

-

V

IE=-10uA ,IC=0

ICBO

-

-10

uA

VCB=-25V, IE=0

IEBO

-

-10

uA

VEB=-5V, IC=0

*VCE(sat)1

-

-500

mV

IC=-1A, IB=-100mA

*VBE(on)

-

-1.0

V

VCE=-1V, IC=-1A

*hFE1

50

-

VCE=-10V, IC=-5mA

*hFE2

85

-

375

VCE=-1V, IC=-500mA

*hFE3

60

-

VCE=-1V, IC=-1A

fT

-

60

-

MHz

VCE=-5V, IC=-10mA

*Pulse Test: Pulse Width 380 s, Duty Cycle 2%

SOT-223

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