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PMOS Electrical Characteristics (TJ=25℃ unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BVDSS

VGS= 0V, ID=-250μA

-30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-

-

-1

μA

VDS=-30V, VGS=0V, Tj=150℃

-

-

-100

Gate-Body Leakage Current

IGSS

VGS= ±20V, VDS=0V

-

-

±100

nA

Gate Threshold Voltage

VGS(th)

VDS= VGS, ID=-250μA

-1.0

-2.

5

V

Static Drain-Source On-Resistance

RDS(on)

VGS=-10V, ID=-5A

-

34

m

Ω

VGS=-4.5V, ID=-3.5A

-

49

Diode Forward Voltage

VSD

IS=-5A, VGS=0V

-

-

-1.2

V

Gate resistance

RG

f=1MHz

-

15

-

Ω

Maximum Body-Diode Continuous Current

IS

-

-

-5

A

Dynamic Parameters

Input Capacitance

Ciss

VDS=-15V, VGS=0V, f=1MHz

-

490

-

pF

Output Capacitance

Coss

-

75

-

Reverse Transfer Capacitance

Crss

-

60

-

Switching Parameters

Total Gate Charge

Qg

VGS=-10V, VDS=-15V, ID=-5A

-

9

-

nC

Gate-Source Charge

Qgs

-

1.5

-

Gate-Drain Charge

Qgd

-

2.3

-

Reverse Recovery Charge

Qrr

IF=-5A, di/dt=100A/us

-

12

-

nC

Reverse Recovery Time

trr

-

32

-

ns

Turn-on Delay Time

tD(on)

VGS=-10V, VDD=-15V, ID=-5A

RGEN=2.5Ω

-

9

-

ns

Turn-on Rise Time

tr

-

3

-

Turn-off Delay Time

tD(off)

-

29

-

Turn-off fall Time

tf

-

15

-

A. Repetitive rating; pulse width limited by max. junction temperature.

B. Pd is based on max. junction temperature, using junction-case thermal resistance.

C. The value of RθJA is measured with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in the still air environment with TA =25℃.

The maximum allowed junction temperature of 150

℃. The value in any given application depends on the user's specific board design.

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C3028LD

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