GC2301

Page: 2/4

ISSUED DATE :2005/05/24

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.1

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

-0.5

-

-

V

Forward Transconductance

-

4.4

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

-10

uA

-

-

130

-

-

190

m

-

5.2

10

Gate-Source Charge

-

1.36

-

Gate-Drain (“Miller”) Change

-

0.6

-

nC

-

5.2

-

Rise Time

-

9.7

-

Turn-off Delay Time

-

19

-

Fall Time

-

29

-

ns

Input Capacitance

-

295

-

Output Capacitance

-

170

-

Reverse Transfer Capacitance

-

65

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

-

-

-1

A

1

-

-

-10

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.