MCP1703-1502ESLASHCD datasheet(4/24 Pages) MICROCHIP

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MCP1703

DS22049A-page 4

TEMPERATURE SPECIFICATIONS

Dropout Voltage

Note 1, Note 5

VDROPOUT

—

330

650

IL = 250 mA, VR = 5.0V

—

525

725

IL = 250 mA, 3.3V ≤ VR < 5.0V

—

625

975

IL = 250 mA, 2.8V ≤ VR < 3.3V

—

750

1100

IL = 250 mA, 2.5V ≤ VR < 2.8V

——

—

VR < 2.5V, See Maximum Output

Current Parameter

Output Delay Time

TDELAY

—

1000

—

µs

VIN = 0V to 6V, VOUT = 90% VR,

RL = 50Ω resistive

Output Noise

—8

µV/(Hz)1/2

IL = 50 mA, f = 1 kHz, COUT = 1 µF

Power Supply Ripple

Rejection Ratio

PSRR

—

f = 100 Hz, COUT = 1 µF, IL = 100 µA,

VINAC = 100 mV pk-pk, CIN = 0 µF,

VR =1.2V

Thermal Shutdown Protection

TSD

—

150

—

°C

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise specified, all limits are established for V

IN = VOUT(MAX) + VDROPOUT(MAX), Note 1,

ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.

Boldface type applies for junction temperatures, T

J (Note 7) of -40°C to +125°C.

Parameters

Symbol

Min

Typ

Max

Units

Conditions

Note 1:

The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).

VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.

The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.

TCVOUT = (VOUT-HIGH - VOUT-LOW) *10

6 / (V

R * ΔTemperature), VOUT-HIGH = highest voltage measured over the temper-

ature range. VOUT-LOW = lowest voltage measured over the temperature range.

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCVOUT.

Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

+125

°C

Operating Temperature Range

-40

+125

°C

Storage Temperature Range

-65

+150

°C

Thermal Package Resistance

Thermal Resistance, 3LD-SOT-223

—

°C/W

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

Thermal Resistance, 3LD-SOT-23A

—

336

110

—

°C/W

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

Thermal Resistance, 3LD-SOT-89

—

°C/W

0.100 sq in copper on both sides of 2

sided board, with vias

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

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