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MCP1256 датащи(PDF) 4 Page - Microchip Technology |
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MCP1256 датащи(HTML) 4 Page - Microchip Technology |
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4 / 24 page ![]() MCP1256/7/8/9 DS21989A-page 4 © 2006 Microchip Technology Inc. MCP1256 and MCP1257 Devices SLEEP Mode Input - SLEEP SLEEP Input Voltage Low VIL(SLEEP) —— 0.4 V SLEEP Input Voltage High VIH(SLEEP) 1.4 — — V SLEEP Input Leakage Current ILK(SLEEP) — 0.001 0.1 μA SLEEP Quiescent Current IQ —10 20 μAVSLEEP = 0V, IOUT = 0 mA MCP1256 and MCP1258 Devices Power-Good Output - PGOOD PGOOD Threshold VTH — 93 — % Percent of VOUT Falling PGOOD Hysteresis VHYS —110 — mV VOUT Rising PGOOD Output Low Voltage VOL — 25 100 mV ISINK = 0.5 mA, VIN = 1.8V PGOOD Input Leakage Current ILK(PGOOD) —0.02 1 μAVPGOOD = VIN MCP1257 and MCP1259 Low-Battery Output - LBO LBO Threshold VTH —1.95— V VIN Falling LBO Hysteresis VHYS — 240 — mV VIN Rising LBO Output Low Voltage VOL — 25 100 mV ISINK = 0.5 mA, VIN = 1.8V LBO Input Leakage Current ILK(LBO) —0.02 1 μAVLBO = VIN MCP1258 and MCP1259 BYPASS Mode Input - BYPASS BYPASS Input Voltage Low VIL(BYPASS) —— 0.4 V BYPASS Input Voltage High VIH(BYPASS) 1.4 — — V BYPASS Input Leakage Current ILK(BYPASS) — 0.001 0.1 μA BYPASS Quiescent Current IQ —0.25 2 μAVBYPASS = 0V, IOUT = 0 mA, TJ = +25°C BYPASS Input-to-Output Impedance RBYPASS —1.5 — Ω VIN = 2.4V DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = 1.8V to 3.6V, SHDN = VIN, CIN = COUT = 10 μF, C1 = C2 = 1 μF, IOUT = 10 mA, TJ = -40°C to +125°C. Typical values are at TJ = +25°C. Parameters Sym Min Typ Max Unit s Conditions |
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