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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TC647BEOATR датащи(PDF) 25 Page - Microchip Technology |
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TC647BEOATR датащи(HTML) 25 Page - Microchip Technology |
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25 / 34 page  2003 Microchip Technology Inc. DS21756B-page 25 TC642B/TC647B FIGURE 5-13: Design Example Schematic. Bypass capacitor CVDD is added to the design to decouple the bias voltage. This is good to have, espe- cially when using a MOSFET as the drive device. This helps to give a localized low-impedance source for the current required to charge the gate capacitance of Q1. Two other bypass capacitors, labeled as CB, were also added to decouple the VIN and VMIN nodes. These were added simply to remove any noise present that might cause false triggerings or PWM jitter. R5 is the pull-up resistor for the FAULT output. The value for this resistor is system-dependent. FAULT SENSE R1 R2 R3 32.4 k Ω R4 GND Q1 +12V +5V VDD VIN VMIN VOUT RSENSE CSENSE CF 1.0 µF CF TC647B Fan CB 0.01 µF CB 0.01 µF + 4 5 7 6 8 1 3 2 +5V 17.8 k Ω 237 k Ω 45.3 k Ω R5 10 k Ω 0.1 µF SI2302 or MGSF1N02E Panasonic® 12V, 140 mA FBA06T12H Thermometrics® 100 k Ω @25°C NHQ104B425R5 CVDD 1.0 µF 3.0 Ω |
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