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CS1235N3A датащи(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

номер детали CS1235N3A
подробное описание детали  TRIACS
PDF  9 Pages
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производитель  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
домашняя страница  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

CS1235N3A датащи(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  CS1235N3A Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 6Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 7Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 8Page - JILIN SINO-MICROELECTRONICS CO., LTD. CS1235N3A Datasheet HTML 9Page - JILIN SINO-MICROELECTRONICS CO., LTD.  
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R
CS1235N3A
版本：
202107A
2/9
订货信息 ORDER MESSAGES
订货型号 Order codes
印记
Marking
封装
Package
有卤-条管
无卤-条管
有卤-袋装
无卤-袋装
CS1235N3A
TO-263
Halogen-Tube
halogen-Free-Tube
Halogen- Bag
Halogen-Free-Bag
CS1235N3A-S-B
CS1235N3A-S-BR
CS1235N3A-S-C
CS1235N3A-S-CR
有卤-条管
无卤-条管
有卤-袋装
无卤-袋装
CS1235N3A
TO-220C
Halogen-Tube
halogen-Free-Tube
Halogen- Bag
Halogen-Free-Bag
CS1235N3A-C-B
CS1235N3A-C-BR
CS1235N3A-C-C
CS1235N3A-C-CR
有卤-条管
无卤-条管
有卤-袋装
无卤-袋装
CS1235N3A
TO-220S
Halogen-Tube
halogen-Free-Tube
Halogen- Bag
Halogen-Free-Bag
CS1235N3A-CB-B
CS1235N3A-CB-BR
CS1235N3A-CB-C
CS1235N3A-CB-CR
有卤-条管
无卤-条管
有卤-袋装
无卤-袋装
CS1235N3A
TO-220MF-K1
Halogen-Tube
halogen-Free-Tube
Halogen- Bag
Halogen-Free-Bag
CS1235N3A-F1-B
CS1235N3A-F1-BR
CS1235N3A-F1-C
CS1235N3A-F1-CR
绝对最大额定值
ABSOLUTE RATINGS (TC=25℃)
项
目
Parameter
符
号
Symbol
试 验 条 件
Condition
数 值
Value
单位
Unit
重复峰值断态电压
Repetitive peak off-state voltage
VDRM
±800
V
通态方均根电流 On-state RMS current
IT(RMS)
full sine wave
12
A
非 重 复 浪 涌 峰 值 通 态 电 流 Non-
repetitive surge peak on-state current
ITSM
full sine wave ,t=20ms
150
A
full sine wave ,t=16.7ms
161
A
I2t
t=10ms
112
A2s
通态电流临界上升率 Repetitive rate of
rise of on-state current after triggering
dI/dt
ITM=12A, IG=0.2A,
dIG/dt=0.2A/μs
100
A/μs
峰值门极电流
Peak gate current
IGM
2
A
峰值门极电压
Peak gate voltage
VGM
5
V
峰值门极功率
Peak gate power
PGM
5
W
平均门极功率
Average gate power
PG(AV)
over any 20ms period
0.5
W
存储温度
Storage temperature
Tstg
-40~150
℃
操作结温 Operation junction temperature
TVJ
125
℃



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