STB12NK80Z datasheet(1/2 Pages) ISC

номер детали	STB12NK80Z

подробное описание детали	isc N-Channel MOSFET Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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isc N-Channel MOSFET Transistor

STB12NK80Z

www.iscsemi.com

1

FEATURES

·Drain Current -ID=10.5A@ TC=25℃

·Drain Source Voltage -VDSS= 800V(Min)

·Static Drain-Source On-Resistance

-RDS(on) = 0.75Ω(Max)@VGS= 10V

DESCRIPTION

·

Motor drive, DC-DC converter, power switch

and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage-Continuous

±

30

V

ID

Drain Current-Continuous

10.5

A

IDM

Drain Current-Single Pulse

42

A

PD

Total Dissipation @TC=25℃

190

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.66

℃

/W

2

3

1

Аналогичный номер детали - STB12NK80Z

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB12NK80Z	342Kb / 15P	N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET 2005-Sep-02
STMicroelectronics	STB12NK80Z	522Kb / 16P	N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET 27-Apr-2007
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	STB12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET
	STB12NK80Z	151Kb / 3P	N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

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STB12NK80Z датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

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