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STGHU30M65DF2AG датащи(PDF) 3 Page - STMicroelectronics

номер детали STGHU30M65DF2AG
подробное описание детали  Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGHU30M65DF2AG датащи(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 3. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)CES
Collector-emitter breakdown
voltage
VGE = 0 V, IC = 250 μA
650
V
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 30 A
1.60
2.0
V
VGE = 15 V, IC = 30 A, TJ = 125 °C
1.84
VGE = 15 V, IC = 30 A, TJ = 175 °C
2.0
VF
Forward on-voltage
IF = 30 A
1.86
2.65
V
IF = 30 A, TJ = 125 °C
1.6
IF = 30 A, TJ = 175 °C
1.5
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 500 µA
5
6
7
V
ICES
Collector cut-off current
VGE = 0 V, VCE = 650 V
25
µA
IGES
Gate-emitter leakage current
VCE = 0 V, VGE = ±20 V
±250
nA
Table 4. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cies
Input capacitance
VCE = 25 V, f = 1 MHz, VGE = 0 V
-
2393
-
pF
Coes
Output capacitance
-
146
-
pF
Cres
Reverse transfer capacitance
-
45.4
-
pF
Qg
Total gate charge
VCC = 520 V, IC = 30 A, VGE = 0 to 15 V
(see Figure 26. Gate charge test circuit)
-
90
-
nC
Qge
Gate-emitter charge
-
16.5
-
nC
Qgc
Gate-collector charge
-
39
-
nC
STGHU30M65DF2AG
Electrical characteristics
DS14705 - Rev 1
page 3/16



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