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MMFT65R090RTH датащи(PDF) 2 Page - MagnaChip Semiconductor.

номер детали MMFT65R090RTH
подробное описание детали  650V 0.09Ω N-channel MOSFET
PDF  10 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MMFT65R090RTH датащи(HTML) 2 Page - MagnaChip Semiconductor.

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MMFT65R090R Datasheet
Aug. 2024. Revision 1.4
2
Magnachip Semiconductor Ltd.
Parameter
Symbol
Rating
Unit
Note
Drain – Source voltage
VDSS
650
V
Gate – Source voltage
VGSS
±
30
V
Continuous drain current1)
ID
35
A
TC=25℃
22
A
TC=100℃
Pulsed drain current2)
IDM
105
A
Power dissipation
PD
38.9
W
Single - pulse avalanche energy3)
EAS
900
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Continuous diode forward current
dv/dt
35
A
Diode dv/dt ruggedness4)
Tstg
50
V/ns
Storage temperature
Tj
-55 ~150
℃
Maximum operating junction
temperature
VDSS
150
℃
1)
ID limited by maximum junction temperature
2)
Pulse width tP limited by Tj,max
3)
IAS : 9 A
4)
ISD ≤ ID, VDS peak ≤ 400V, Tj=25oC
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
RthJC
3.21
℃/W
Thermal resistance, junction-ambient max
RthJA
73.7
℃/W
Thermal Characteristics
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)



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