Magnachip Power Technology

MDP08N032TH

Source-drain diode

VDD=40 V, ID=60 A, VGS=0 to 10 V

V

VDD=40 V, ID=60 A, VGS=0 to 10 V

nC

VDD=40 V, ID=60 A, VGS=0 to 10 V

nC

24

-

VDD=40 V, ID=60 A, VGS=0 to 10 V

nC

Reverse recovery charge

Qrr

-

304

-

IF=60 A, diF/dt=100 A/μs

nC

Reverse recovery time

trr

-

111

-

IF=60 A, diF/dt=100 A/μs

ns

Diode forward voltage

VSD

-

0.9

1.2

VGS=0 V, IF=60 A

V

Diode pulse current

IS,pulse

-

-

480

A

pulsed; tp ≤

10 μs

Parameter

Symbol

Min.

Typ.

Max.

Diode continuous forward current

IS

-

-

120

A

-

Conditions / Note

Unit

-

22

-

Gate to source charge

Qgs

-

30

-

VDD=40 V, VGS=10 V, ID=60 A, RG,ext=3Ω

ns

VDD=40 V, ID=60 A, VGS=0 to 10 V

nC

Gate charge characteristics

Parameter

Symbol

Min.

Typ.

Max.

Conditions / Note

Unit

nC

VDD=40 V, ID=60 A, VGS=0 to 10 V

Gate charge at threshold

Qgs(th)

Turn-off delay time

td(off)

-

81

-

VDD=40 V, VGS=10 V, ID=60 A, RG,ext=3Ω

ns

Fall time

tf

-

30

-

Rise time

tr

-

17

-

VDD=40 V, VGS=10 V, ID=60 A, RG,ext=3Ω

ns

Turn-on delay time

td(on)

-

28

-

VDD=40 V, VGS=10 V, ID=60 A, RG,ext=3Ω

ns

Reverse transfer capacitance

Crss

-

40

-

VGS=0 V, VDS=40 V, f=1 MHz

pF

Output capacitance

Coss

-

1408

-

VGS=0 V, VDS=40 V, f=1 MHz

pF

Conditions / Note

Input capacitance

Ciss

-

7077

-

VGS=0 V, VDS=40 V, f=1 MHz

Unit

pF

Dynamic characteristics

Parameter

Symbol

Min.

Typ.

Max.

Gate plateau voltage

Vplateau

-

5.1

-

Gate charge total

Qg

-

106

-

Switching charge

Qsw

-

32

-

Gate to drain charge

Qgd

-

Transconductance

gfs

-

104

-

VDS=10 V, ID=60 A

S

Drain-source breakdown voltage

V(BR)DSS

80

-

-

VGS=0 V, ID=250 μA

V

Gate-source leakage current

IGSS

-

-

± 100

VGS=±20 V, VDS=0 V

nA

Zero gate voltage drain current

IDSS

-

-

1

VDS=80 V, VGS=0 V

μA

Gate threshold voltage

VGS(th)

2.25

3.0

3.75

VDS=VGS, ID=250 μA

V

Gate resistance

RG

-

3.0

-

f=1MHz

Ω

Drain-source on-state resistance

RDS(on)

-

2.70

3.23

VGS=10 V, ID=60 A

mΩ

Electrical Characteristics (TJ = 25

oC)

Static characteristics

Parameter

Symbol

Min.

Typ.

Max.

Conditions / Note

Unit

Jul. 2021. Rev. 1.2

3 / 7

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Product data sheet