Jun. 2021. Version 1.2

Magnachip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDES10N025RH

-

55~175oC

TO-263-7L

Tape & Reel

Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

100

-

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

-

4.0

Drain Cut-Off Current

IDSS

VDS = 100V, VGS = 0V

-

-

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

-

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 100A

-

2.2

2.5

m

Ω

Forward Transconductance

gfs

VDS = 10V, ID = 100A

-

130

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 50V, ID = 50A,

VGS = 10V

-

147

-

nC

Gate-Source Charge

Qgs

-

42

-

Gate-Drain Charge

Qgd

-

28

-

Input Capacitance

Ciss

VDS = 40V, VGS = 0V,

f = 1.0MHz

-

10,420

-

pF

Reverse Transfer Capacitance

Crss

-

75

-

Output Capacitance

Coss

-

2,050

-

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 50V,

ID = 100A , RG = 3.0Ω

-

32

-

ns

Rise Time

tr

-

27

-

Turn-Off Delay Time

td(off)

-

98

-

Fall Time

tf

-

26

-

Gate Resistance

Rg

f=1 MHz

-

3.0

-

Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 100A, VGS = 0V

-

0.9

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 100A, dl/dt = 100A/μs

-

127

ns

Body Diode Reverse Recovery Charge

Qrr

-

416

nC

Note :

1.

Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2.

Pulse width limited by TJmax

3.

EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 33A, VGS = 10V.