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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TDA8501 датащи(PDF) 18 Page - NXP Semiconductors |
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TDA8501 датащи(HTML) 18 Page - NXP Semiconductors |
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18 / 30 page  April 1993 18 Philips Semiconductors Preliminary specification PAL/NTSC encoder TDA8501 CVBS output (pin 16) Isink maximum sink current 650 −− µA Isource maximum source current 1000 −− µA VO DC voltage level Y +SYNC = 0 − 1.6 − V G Y +SYNC gain; from pin 20 to pin 16 − 12 − dB G chrominance difference; from pin 14 to pin 16 − 0 − dB Gø differential phase note 3 −− 3 degrees GV differential gain note 4 −− 3dB RO output resistance − 120 −Ω Oscillator output (pin 23) OSC series-resonance the resonance resistance of the crystal should be < 60 Ω and the parallel capacitance of the crystal should be < 10 pF. Filter tuning loop (pin 15) VDC DC control voltage level NTSC − 0.83 − V VDC DC control voltage level PAL − 0.88 − V VDCL limited DC-level LOW IO = 200 µA − 0.27 − V VDCH limited DC-level HIGH II = 200 µA − 1.8 − V H2 (pin 4) VIL LOW level input voltage inactive 0 − 1V VIH HIGH level input voltage active 4 − 5V II current for forcing HIGH 220 −− µA IO current for forcing LOW 260 −− µA VO voltage out LOW −−< 0.5 V VO voltage out HIGH 4 −− V Isink maximum sink current 50 −− µA Isource maximum source current 50 −− µA Composite sync input (pin 24) VSYNC SYNC pulse amplitude 75 300 600 mV (p-p) slicing level − 50 − % II input current − 4 −µA IO maximum output current during SYNC − 100 −µA BURST ADJ (pin 21; note 5) BP DC voltage level − VREF (V13) − V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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