TDA7010 datasheet(5/11 Pages) PHILIPS

5 / 11 page

September 1983

Philips Semiconductors

Product speciﬁcation

FM radio circuit

TDA7010T

A.C. CHARACTERISTICS

Vp = 4,5 V; Tamb = 25 °C; measured in Fig.4 (mute switch open, enabled); frf = 96 MHz (tuned to max. signal at 5 µV

e.m.f.) modulated with

∆f = ±22,5 kHz; f

m = 1 kHz; EMF = 0,2 mV (e.m.f. voltage at a source impedance of 75 Ω); r.m.s.

noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise speciﬁed.

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Sensitivity (see Fig.3)

(e.m.f. voltage)

for

−3 dB limiting;

muting disabled

EMF

−

1,5

−µV

for

−3 dB muting

EMF

−

−µV

for S/N = 26 dB

EMF

−

5,5

−µV

Signal handling (e.m.f. voltage)

for THD < 10%;

∆f = ± 75 kHz

EMF

−

200

−

Signal-to-noise ratio

S/N

−

Total harmonic distortion

∆f = ± 22,5 kHz

THD

−

0,7

−

∆f = ± 75 kHz

THD

−

2,3

−

AM suppression of output voltage

(ratio of the AM output signal

referred to the FM output signal)

FM signal: fm = 1 kHz; ∆f = ± 75 kHz

AM signal: fm = 1 kHz; m = 80%

AMS

−

Ripple rejection (

∆V

P = 100 mV; f = 1 kHz)

−

Oscillator voltage (r.m.s. value) at pin 5

V5-4(rms)

−

250

−

Variation of oscillator frequency

with supply voltage (

∆V

P = 1 V)

∆f

osc

−

kHz/V

Selectivity

S+300

−

S−300

−

A.F.C. range

∆f

−± 300

−

kHz

Audio bandwidth at

∆V

o = 3 dB

measured with pre-emphasis (t = 50

µs)

−

kHz

A.F. output voltage (r.m.s. value)

at RL = 22 kΩ

Vo(rms)

−

Load resistance

at VP = 4,5 V

−−

Ω

at VP = 9,0 V

−−

Ω

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