Rating and Characteristic Curves (ASM24BC-HF)

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Page 2

V

V

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

IT = 1mA

V(BR)

VRWM

Reverse stand-off voltage

Reverse breakdown voltage

26.2

24

V

µA

VRWM = 24V

IPP = 1A, tp = 8/20µs

VC

IR

Reverse leakage current

Clamping voltage

40

0.1

pF

IPP = 5A, tp = 8/20µs

VR = 0V, f = 1MHz, (Line to GND)

CJ

VC

52

45

Junction capacitance

30

SMD ESD Protection Diode

32

VC

IPP = 7A, tp = 8/20µs

Fig.2 - ESD Pulse Waveform

According to IEC 61000-4-2

30ns

t

60ns

10

90

100

Time, (

ns)

tr=0.7~1ns

0

40

80

100

120

20

60

0

25

50

75

100

125

150

Fig.3 - Power Derating Curve

Ambient Temperature, Ta (°C)

0

0

10

20

40

5

15

25

30

35

Time, (

µs)

10

100

110

Fig.1 - 8/20µs waveform per

IEC 61000-4-5

90

20

30

40

50

60

70

80

T2

T1

T

Front time: T1=1.25xT=8µs

Time to half-value: T2=20µs

AQW-JP011

REV:A