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TDA5145 датащи(PDF) 5 Page - NXP Semiconductors

номер детали TDA5145
подробное описание детали  Brushless DC motor drive circuit
PDF  24 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA5145 датащи(HTML) 5 Page - NXP Semiconductors

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June 1994
5
Philips Semiconductors
Product specification
Brushless DC motor drive circuit
TDA5145
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
The TDA5145 offers a sensorless three phase motor drive
function. It is unique in its combination of sensorless motor
drive and full-wave drive. The TDA5145 offers protected
outputs capable of handling high currents and can be used
with star or delta connected motors. It can easily be
adapted for different motors and applications. The
TDA5145 offers the following features:
• Sensorless commutation by using the motor EMF.
• Built-in start-up circuit.
• Optimum commutation, independent of motor type or
motor loading.
• Built-in flyback diodes.
• Three phase full-wave drive.
• High output current (2.0 A).
• Outputs protected by current limiting and thermal
protection of each output transistor.
• Low current consumption by adaptive base-drive.
• Soft-switching pulse output for low radiation.
• Accurate frequency generator (FG) by using the
motor EMF.
• Direction of rotation controlled by one pin.
• Uncommitted operational transconductance amplifier
(OTA), with a high output current, for use as a control
amplifier.
• Brake function.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
18
V
VI
input voltage; all pins except
VMOT
VI < 18 V
−0.3
VP + 0.5
V
VVMOT
VMOT input voltage
−0.5
17
V
VO
output voltage
AMP OUT and FG
GND
VP
V
MOT0, MOT1, MOT2 and MOT3
−1V
VMOT + VDHF
V
VI
input voltage CAP-ST, CAP-TI,
CAP-CD and CAP-DC
2.5
V
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
0
+70
°C
Ptot
total power dissipation
see Figs 3 and 4
−−
W
Ves
electrostatic handling
see Chapter “Handling”
2000
V



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