MS2393

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DESCRIPTION:

The MS2393 is a gold metallized, silicon NPN power transistor.

The MS2393 is designed for applications requiring high peak power

and low duty cycles such as IFF, DME and TACAN. The MS2393 is

packaged in a metal/ceramic package with internal input/output

matching, resulting in improved broadband performance and low

thermal resistance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

11

A

Power Dissipation

583

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Junction-Case Thermal Resistance

0.30

°°C/W

Features

Features

• Designed For High Power Pulse IFF, DME, and TACAN

Applications

• 200 W (typ.) IFF 1030 – 1090 MHz

• 150 W (min.) DME 1025 – 1150 MHz

• 140 W (typ.) TACAN 960 – 1215 MHz

• 8.2 dB Gain

• Refractory Gold Metallization

• Ballasting And Low Thermal Resistance For Reliability

And Ruggedness

• 20:1 Load VSWR At Specified Operating Conditions

• Input And Output Matched Common Base

Configuration

RF AND MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855