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MS2213

DESCRIPTION

::

The MS2213 is a silicon NPN bipolar device specifically designed

for JTIDS pulsed power applications from 960-1215 MHz.

Gold metallization and emitter ballasting assure high reliability

under Class C amplifier operation. This device operates over a

wide range of pulse widths, duty cycles and temperatures, and

can withstand a 15:1 VSWR mismatch under load.

BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Supply Voltage

40

V

Device Current

3.5

A

Power Dissipation

75

W

Junction Temperature (RF Pulsed Operation)

+250

°°C

Storage Temperature

-65 to +200

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

2.2

°°C/W

Features

• 960-1215 MHz

• COMMON BASE

• GOLD METALLIZATION

• HERMETIC PACKAGE

• CLASS C OPERATION

• POUT = 30 W MIN. WITH 7.8 dB GAIN

RF & MICROWAVE TRANSISTORS

AVIONICS/JTIDS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855