NIF9N05CL, NIF9N05ACL

http://onsemi.com

5

TYPICAL PERFORMANCE CURVES

VDS = 0 V

VGS = 0 V

0

10

10

300

200

100

0

35

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

01

4

1

0

QG, TOTAL GATE CHARGE (nC)

TJ = 25°C

Coss

Ciss

Crss

ID = 2.6 A

TJ = 25°C

500

3

2

3

QGD

QGS

5

400

5

VGS

VDS

15

25

0.8

1

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

0.9

1

3

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Gate Charge

Figure 9. Resistance Switching Time Variation

vs. Gate Resistance

5

4

QT

0.5

0.7

0.6

2

20

Crss

Ciss

Figure 10. Diode Forward Voltage vs. Current

10

RG, GATE RESISTANCE (W)

VDD = 40 V

ID = 2.6 A

VGS = 10 V

td(off)

10000

100000

100

1

10

100

1000

25

30

40

10

0

20

30

50

VGS

VDS

td(on)

tr

tf

ORDERING INFORMATION

Device

Package

Shipping†

NIF9N05CLT1

SOT−223

1000 / Tape & Reel

NIF9N05CLT1G

SOT−223

(Pb−Free)

NIF9N05ACLT1G

NIF9N05CLT3

SOT−223

4000 / Tape & Reel

NIF9N05CLT3G

SOT−223

(Pb−Free)

NIF9N05ACLT3G

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.