NIF9N05CL, NIF9N05ACL

http://onsemi.com

2

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)

(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C)

Temperature Coefficient (Negative)

V(BR)DSS

52

50.8

55

54

−9.3

59

59.5

V

V

mV/°C

Zero Gate Voltage Drain Current

(VDS = 40 V, VGS = 0 V)

(VDS = 40 V, VGS = 0 V, TJ = 125°C)

IDSS

10

25

mA

Gate−Body Leakage Current

(VGS = ±8 V, VDS = 0 V)

(VGS = ±14 V, VDS = 0 V)

IGSS

±22

±10

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 100 mA)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.3

1.75

−4.1

2.5

V

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 3.5 V, ID = 0.6 A)

(VGS = 4.0 V, ID = 1.5 A)

(VGS = 10 V, ID = 2.6 A)

RDS(on)

190

165

107

380

200

125

mW

Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)

gFS

3.8

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

VDS = 35 V, VGS = 0 V,

f = 10 kHz

Ciss

155

250

pF

Output Capacitance

Coss

60

100

Transfer Capacitance

Crss

25

40

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 10 kHz

Ciss

170

pF

Output Capacitance

Coss

70

Transfer Capacitance

Crss

30

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.