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STW18NK80Z датащи(PDF) 3 Page - STMicroelectronics

номер детали STW18NK80Z
подробное описание детали  N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH™ Power MOSFET
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW18NK80Z датащи(HTML) 3 Page - STMicroelectronics

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STW18NK80Z
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
800
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
19
A
ID
Drain current (continuous) at TC = 100°C
12
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
76
A
Ptot
Total dissipation at TC = 25°C
350
W
Derating Factor
2.4
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
6000
V
dv/dt(2)
2.
ISD ≤19A, di/dt ≤300A/µs, VDD ≤VDD < 800V, Tj ≤TJMAX
Peak diode recovery voltage slope
4.5
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
0.36
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
TJ
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
19
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
700
mJ
Table 4.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
V



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