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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS75R12KT4 датащи(PDF) 3 Page - Infineon Technologies AG |
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FS75R12KT4 датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page  Datasheet 3 V3.0 2019-09-13 FS75R12KT4 Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V Dauergleichstrom ContinuousDCforwardcurrent IF 75 A PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms IFRM 150 A Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 960 A²s CharakteristischeWerte/CharacteristicValues min. typ. max. Durchlassspannung Forwardvoltage IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V VF 1,70 1,65 1,65 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Rückstromspitze Peakreverserecoverycurrent IF = 75 A, - diF/dt = 1900 A/µs (Tvj=150°C) VR = 600 V VGE = -15 V IRM 116 118 124 A A A Tvj = 25°C Tvj = 125°C Tvj = 150°C Sperrverzögerungsladung Recoveredcharge IF = 75 A, - diF/dt = 1900 A/µs (Tvj=150°C) VR = 600 V VGE = -15 V Qr 8,60 14,0 15,8 µC µC µC Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltenergieproPuls Reverserecoveryenergy IF = 75 A, - diF/dt = 1900 A/µs (Tvj=150°C) VR = 600 V VGE = -15 V Erec 2,60 4,50 5,50 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proDiode/perdiode RthJC 0,620 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proDiode/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,311 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C NTC-Widerstand/NTC-Thermistor CharakteristischeWerte/CharacteristicValues min. typ. max. Nennwiderstand Ratedresistance TNTC = 25°C R25 5,00 k Ω AbweichungvonR100 DeviationofR100 TNTC = 100°C, R100 = 493 Ω ∆R/R -5 5 % Verlustleistung Powerdissipation TNTC = 25°C P25 20,0 mW B-Wert B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-Wert B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-Wert B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K AngabengemäßgültigerApplicationNote. Specificationaccordingtothevalidapplicationnote. |
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