APTM120UM95FAG

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2 – 6

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

0.6

Zero Gate Voltage Drain Current

3

mA

Drain – Source on Resistance

95

114

m

Ω

Gate Threshold Voltage

3

5

V

Gate – Source Leakage Current

±500

nA

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

30.9

Output Capacitance

4.6

Reverse Transfer Capacitance

f = 1MHz

0.78

nF

Total gate Charge

1122

Gate – Source Charge

144

Gate – Drain Charge

720

nC

Turn-on Delay Time

20

Rise Time

15

Turn-off Delay Time

160

Fall Time

Inductive switching @ 125°C

45

ns

Turn-on Switching Energy

5.9

Turn-off Switching Energy

Inductive switching @ 25°C

4.1

mJ

Turn-on Switching Energy

9.4

Turn-off Switching Energy

Inductive switching @ 125°C

5.14

mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

103

Continuous Source current

(Body diode)

Tc = 80°C

77

A

Diode Forward Voltage

1.3

V

dv/dt

Peak Diode Recovery

18

V/ns

320

Reverse Recovery Time

650

ns

12

Reverse Recovery Charge

42

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 700A/µs