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APTM120U10SAG датащи(PDF) 3 Page - Microsemi Corporation

номер детали APTM120U10SAG
подробное описание детали  Single switch Series & parallel diodes MOSFET Power Module
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120U10SAG датащи(HTML) 3 Page - Microsemi Corporation

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APTM120U10SAG
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Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
750
µA
IF
DC Forward Current
Tc = 80°C
180
A
IF = 180A
2.5
3
IF = 360A
3
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
1.8
V
Tj = 25°C
265
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
3.6
Qrr
Reverse Recovery Charge
IF = 180A
VR = 800V
di/dt = 600A/µs
Tj = 125°C
12
µC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.038
Series diode
0.46
RthJC
Junction to Case Thermal Resistance
Parallel diode
0.32
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com



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