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APTM120H29FG датащи(PDF) 6 Page - Microsemi Corporation

номер детали APTM120H29FG
подробное описание детали  Full - Bridge MOSFET Power Module
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120H29FG датащи(HTML) 6 Page - Microsemi Corporation

  APTM120H29FG Datasheet HTML 1Page - Microsemi Corporation APTM120H29FG Datasheet HTML 2Page - Microsemi Corporation APTM120H29FG Datasheet HTML 3Page - Microsemi Corporation APTM120H29FG Datasheet HTML 4Page - Microsemi Corporation APTM120H29FG Datasheet HTML 5Page - Microsemi Corporation APTM120H29FG Datasheet HTML 6Page - Microsemi Corporation  
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APTM120H29FG
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Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
180
10
20
30
40
50
60
70
ID, Drain Current (A)
VDS=800V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
10
20
30
40
50
60
70
ID, Drain Current (A)
VDS=800V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
6
10
20
30
40
50
60
70
ID, Drain Current (A)
VDS=800V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
1
2
3
4
5
6
7
0.0
2.5
5.0
7.5 10.0 12.5 15.0 17.5
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=34A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
8
1216
202428
32
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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