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APTM120DA15G датащи(PDF) 6 Page - Microsemi Corporation

номер детали APTM120DA15G
подробное описание детали  Boost chopper MOSFET Power Module
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120DA15G датащи(HTML) 6 Page - Microsemi Corporation

  APTM120DA15G Datasheet HTML 1Page - Microsemi Corporation APTM120DA15G Datasheet HTML 2Page - Microsemi Corporation APTM120DA15G Datasheet HTML 3Page - Microsemi Corporation APTM120DA15G Datasheet HTML 4Page - Microsemi Corporation APTM120DA15G Datasheet HTML 5Page - Microsemi Corporation APTM120DA15G Datasheet HTML 6Page - Microsemi Corporation  
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APTM120DA15G
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Delay Times vs Current
td(on)
td(off)
0
30
60
90
120
150
180
20
40
60
80
100
120
140
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
20
40
60
80
100
120
140
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
12
20
40
60
80
100
120
140
ID, Drain Current (A)
VDS=800V
RG=1.2Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
2
4
6
8
10
12
14
0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=60A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
5
1525
354555
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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