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APTM50TAM65FPG датащи(PDF) 6 Page - Microsemi Corporation

номер детали APTM50TAM65FPG
подробное описание детали  Triple phase leg MOSFET Power Module
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50TAM65FPG датащи(HTML) 6 Page - Microsemi Corporation

  APTM50TAM65FPG Datasheet HTML 1Page - Microsemi Corporation APTM50TAM65FPG Datasheet HTML 2Page - Microsemi Corporation APTM50TAM65FPG Datasheet HTML 3Page - Microsemi Corporation APTM50TAM65FPG Datasheet HTML 4Page - Microsemi Corporation APTM50TAM65FPG Datasheet HTML 5Page - Microsemi Corporation APTM50TAM65FPG Datasheet HTML 6Page - Microsemi Corporation  
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APTM50TAM65FPG
www.microsemi.com
6 – 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4
0.60.8
1
1.2
1.41.6
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
10
20
30
40
50
60
70
80
ID, Drain Current (A)
VDS=333V
RG=3Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
1
2
3
4
5
0
5
10 15 20 25 30 35 40 45
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=333V
ID=51A
TJ=125°C
L=100µH
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10
15
20
25
30
35
40
45
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=3Ω
TJ=125°C
TC=75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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