4N65-TC1

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R205-572.A



ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID= 250μA

650

V

Drain-Source Leakage Current

IDSS

VDS=650V, VGS=0V

10

µA

Forward

VGS=30V, VDS=0V

100

nA

Gate-Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2.0A

2.7

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

532

pF

Output Capacitance

COSS

57

pF

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0 MHz

3.5

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

15

nC

Gateource Charge

QGS

4.9

nC

Gate-Drain Charge

QGD

VDS=520V, VGS=10V, ID=4A

IG=1mA (Note 1, 2)

3

nC

Turn-on Delay Time (Note 1)

tD(ON)

5.6

ns

Rise Time

tR

16.5

ns

Turn-off Delay Time

tD(OFF)

37

ns

Fall-Time

tF

VDS=100V, VGS=10V, ID=4A,

RG=25Ω (Note 1, 2)

26.5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

IS

4

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

8

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=4A, VGS=0V

1.4

V

Reverse Recovery Time (Note 1)

trr

332

ns

Reverse Recovery Charge

Qrr

IS=4A, VGS=0V

dIF/dt=100A/µs (Note1)

1.7

µC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.