UNISONIC TECHNOLOGIES CO., LTD

3N120-E3

Preliminary

Power MOSFET

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Copyright © 2024 Unisonic Technologies Co., Ltd

QW-R502-D137.c

3.0A, 1200V N-CHANNEL

POWER MOSFET

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DESCRIPTION

The UTC 3N120-E3 provide excellent RDS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

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FEATURES0

* RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A

* Low Reverse Transfer Capacitance

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

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SYMBOL

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ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free

Halogen Free

1

2

3

3N120L-TA3-T

3N120G-TA3-T

TO-220

G

D

S

Tube

3N120L-TF1-T

3N120G-TF1-T

TO-220F1

G

D

S

Tube

3N120L-TQ2-T

3N120G-TQ2-T

TO-263

G

D

S

Tube

3N120L-TQ2-R

3N120G-TQ2-R

TO-263

G

D

S

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source