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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM50DHM65TG датащи(PDF) 1 Page - Microsemi Corporation |
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APTM50DHM65TG датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM50DHM65TG www.microsemi.com 1 – 6 NT C2 S4 G4 VBUS SENSE VBUS Q1 G1 S1 OUT1 OUT2 Q4 CR3 0/VBUS CR2 0/VBUS SENSE NTC1 NTC2 OUT2 OUT1 VBUS VBUS SENSE S4 G4 S1 NTC1 0/VBUS 0/VBUS SENSE G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25°C 51 ID Continuous Drain Current Tc = 80°C 38 IDM Pulsed Drain current 204 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 78 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 51 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Asymmetrical - Bridge MOSFET Power Module |
Аналогичный номер детали - APTM50DHM65TG |
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Аналогичное описание - APTM50DHM65TG |
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