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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTM50DHM35G датащи(PDF) 1 Page - Microsemi Corporation |
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APTM50DHM35G датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM50DHM35G www.microsemi.com 1 – 6 G1 S1 S4 G4 CR3 VBUS OUT2 0/VBUS Q4 OUT1 CR2 Q1 S4 G4 VBUS 0/VBUS S1 G1 OUT1 OUT2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25°C 99 ID Continuous Drain Current Tc = 80°C 74 IDM Pulsed Drain current 396 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 39 m Ω PD Maximum Power Dissipation Tc = 25°C 781 W IAR Avalanche current (repetitive and non repetitive) 51 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 500V RDSon = 35mΩ typ @ Tj = 25°C ID = 99A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Asymmetrical - bridge MOSFET Power Module |
Аналогичный номер детали - APTM50DHM35G |
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Аналогичное описание - APTM50DHM35G |
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