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APTM50DAM17G датащи(PDF) 2 Page - Microsemi Corporation

номер детали APTM50DAM17G
подробное описание детали  Boost chopper MOSFET Power Module
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DAM17G датащи(HTML) 2 Page - Microsemi Corporation

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APTM50DAM17G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
400
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
2000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 90A
17
20
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28
Coss
Output Capacitance
5.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
160
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 180A
280
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
38
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 180A
RG = 0.5Ω
93
ns
Eon
Turn-on Switching Energy
4140
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
3380
µJ
Eon
Turn-on Switching Energy
6224
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 180A, RG = 0.5Ω
4052
µJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
500
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
1000
µA
IF
DC Forward Current
Tc = 70°C
180
A
IF = 180A
1.6
1.8
IF = 360A
1.9
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
Tj = 125°C
170
ns
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 180A
VR = 400V
di/dt = 600A/µs
Tj = 125°C
2760
nC



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