APTM50AM38SCTG

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3 – 8

Parallel diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

250

1000

Maximum Reverse Leakage Current

500

5000

µA

DC Forward Current

Tc = 125°C

50

A

1.6

1.8

Diode Forward Voltage

2.0

2.4

V

Total Capacitive Charge

di/dt =1400A/µs

70

nC

325

Q

Total Capacitance

250

pF

Thermal and package characteristics

Symbol Characteristic

Min

Typ

Max

Unit

Transistor

0.18

Series diode

0.45

Junction to Case Thermal Resistance

Parallel diode

0.5

°C/W

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To heatsink

M5

2.5

4.7

N.m

Wt

Package Weight

160

g

Symbol Characteristic

Min

Typ

Max

Unit

Resistance @ 25°C

50

k

Ω

3952

K

























−

=

T

T

B

R

R

T

1

1

exp

25

85

/

25

25

T: Thermistor temperature