APTM20AM10FTG

www.microsemi.com

1 – 6

G1

Q1

VBUS

NT C2

OUT

S1

G2

S2

Q2

0/VBUS

NT C1

S2

G2

NTC2

OUT

OUT

VBUS

NTC1

S1

S2

G2

0/VBUS

G1

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

200

V

175

Continuous Drain Current

131

Pulsed Drain current

700

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

12

m

Ω

Maximum Power Dissipation

694

W

Avalanche current (repetitive and non repetitive)

89

A

Repetitive Avalanche Energy

50

Single Pulse Avalanche Energy

2500

mJ

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

Features

•

-

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

Lead frames for power connections

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS Compliant

Phase leg

MOSFET Power Module