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APTM20AM04FG датащи(PDF) 2 Page - Microsemi Corporation |
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APTM20AM04FG датащи(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page ![]() APTM20AM04FG www.microsemi.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 200V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 186A 4 5 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 28.9 Coss Output Capacitance 9.32 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.58 nF Qg Total gate Charge 560 Qgs Gate – Source Charge 212 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 372A 268 nC Td(on) Turn-on Delay Time 32 Tr Rise Time 64 Td(off) Turn-off Delay Time 88 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 372A RG = 1.2Ω 116 ns Eon Turn-on Switching Energy 3396 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3716 µJ Eon Turn-on Switching Energy 3744 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 372A, RG = 1.2Ω 3944 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 372 IS Continuous Source current (Body diode) Tc = 80°C 278 A VSD Diode Forward Voltage VGS = 0V, IS = - 372A 1.3 V dv/dt Peak Diode Recovery 5 V/ns Tj = 25°C 230 trr Reverse Recovery Time IS = -372A VR = 133V diS/dt = 400A/µs Tj = 125°C 450 ns Tj = 25°C 3.6 Qrr Reverse Recovery Charge IS = -372A VR = 133V diS/dt = 400A/µs Tj = 125°C 13.6 µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 372A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C |
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