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APTM10DHM05G датащи(PDF) 6 Page - Microsemi Corporation

номер детали APTM10DHM05G
подробное описание детали  Asymmetrical - Bridge MOSFET Power Module
PDF  6 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM10DHM05G датащи(HTML) 6 Page - Microsemi Corporation

  APTM10DHM05G Datasheet HTML 1Page - Microsemi Corporation APTM10DHM05G Datasheet HTML 2Page - Microsemi Corporation APTM10DHM05G Datasheet HTML 3Page - Microsemi Corporation APTM10DHM05G Datasheet HTML 4Page - Microsemi Corporation APTM10DHM05G Datasheet HTML 5Page - Microsemi Corporation APTM10DHM05G Datasheet HTML 6Page - Microsemi Corporation  
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APTM10DHM05G
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Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
100
200
300
400
ID, Drain Current (A)
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
50
100
150
200
250
0
100
200
300
400
ID, Drain Current (A)
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
Eoff
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
ID, Drain Current (A)
VDS=66V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
0
1
2
3
4
5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=66V
ID=200A
TJ=125°C
L=100µH
Hard
switching
ZVS
ZCS
0
20
40
60
80
100
50
100
150
200
250
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=66V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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