APTC60DAM18CTG

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7 – 7

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

50

100

150

200

00.511.522.5

33.5

Reverse Characteristics

0

500

1000

1500

2000

200

300

400

500

600

700

800

Capacitance vs.Reverse Voltage

0

1000

2000

3000

4000

1

10

100

1000

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

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