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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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APTC60AM18SCG датащи(PDF) 1 Page - Microsemi Corporation |
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APTC60AM18SCG датащи(HTML) 1 Page - Microsemi Corporation |
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1 / 7 page  APTC60AM18SCG www.microsemi.com 1 – 7 OUT S1 G2 S2 G1 Q2 0/VBUS VBUS Q1 OUT VBUS S1 G1 0/VBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 143 ID Continuous Drain Current Tc = 80°C 107 IDM Pulsed Drain current 572 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 18 m Ω PD Maximum Power Dissipation Tc = 25°C 833 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 EAS Single Pulse Avalanche Energy 1800 mJ VDSS = 600V RDSon = 18mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module |
Аналогичный номер детали - APTC60AM18SCG |
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Аналогичное описание - APTC60AM18SCG |
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